Tsu-Hsiu Perng,: search on Z-Library

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1

Hot-Electron-Induced Electron Trapping in 0.13 μm nMOSFETs with Ultrathin (EOT=1.6 nm) Nitrided Gate Oxide

Chen, Ching-Wei, Chien, Chao-Hsin, Perng, Tsu-Hsiu, Chang, Chun-Yen

Journal:

Electrochemical and Solid-State Letters

Year:

2005

Language:

english

File:

PDF, 194 KB

english, 2005

2

[IEEE Extended Abstracts of International Workshop on Gate Insulator - Toyko, Japan (2003.11.6-2003.11.7)] Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) - Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ching-Wei Chen,, Chao-Hsin Chien,, Shih-Chich Ou,, Tsu-Hsiu Perng,, Da-Yuan Lee,, Yi-Cheng Chen,, Horng-Chich Lin,, Tiao-Yuan Huang,, Chun-Yen Chang,

Year:

2003

Language:

english

File:

PDF, 220 KB

english, 2003

3

High-density MIM capacitors with HfO2 dielectrics

Tsu-Hsiu Perng, Chao-Hsin Chien, Ching-Wei Chen, Peer Lehnen, Chun-Yen Chang

Journal:

Thin Solid Films

Year:

2004

Language:

english

File:

PDF, 328 KB

english, 2004

4

Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide

Tsu-Hsiu Perng,, Chao-Hsin Chien,, Ching-Wei Chen,, Horng-Chih Lin,, Chun-Yen Chang,, Tiao-Yuan Huang,

Journal:

IEEE Electron Device Letters

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

5

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

Chih-Chieh Yeh,, Chih-Sheng Chang,, Hong-Nien Lin,, Wei-Hsiung Tseng,, Li-Shyue Lai,, Tsu-Hsiu Perng,, Tsung-Lin Lee,, Chang-Yun Chang,, Liang-Gi Yao,, Chia-Cheng Chen,, Ta-Ming Kuan,, Xu,

Year:

2010

Language:

english

File:

PDF, 140 KB

english, 2010

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